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David Hobbs. Photo.

David Hobbs

Professor

David Hobbs. Photo.

Electrons, holes, and the hall effect in amorphous silicon

Author

  • David Hobbs

Summary, in English

The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al. [1] in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.

Department/s

  • Lund Observatory - Has been reorganised

Publishing year

1993-12

Language

English

Pages

457-460

Publication/Series

Journal of Non-Crystalline Solids

Volume

164-166

Document type

Journal article

Publisher

Elsevier

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-3093